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InxGa1-xAs/ In0.52Al0.48As Quantum Wire Heterostructures Fabricated by the Strain-Induced Lateral-Layer Ordering Process
Conference paper

InxGa1-xAs/ In0.52Al0.48As Quantum Wire Heterostructures Fabricated by the Strain-Induced Lateral-Layer Ordering Process

S. T. Chou, L. J. Chou, K. C. Hsieh and K. Y. Cheng
14th North American Conference on Molecular Beam Epitaxy
1994

Abstract

Lateral-Layer;Strain-Induced;Heterostructures;Quantum;InxGa1-xAs/ In0.52Al0.48As

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