Abstract
In this work, we demonstrated a phosphorus implanted Ge0.96Sn0.04 photoconductive antenna (PCA) on Silicon for terahertz (THz) generation. The Ge0.96Sn0.4 layer processed by mature ion implantation was grown on an 8-inch Si wafer through commercially available reduced-pressure chemical vapor deposition (RPCVD), demonstrating a low-cost, mass-producible, and complementary metal oxide semiconductor (CMOS) compatible THz PCA prototype. As a result, the Ge0.96Sn0.04 PCA achieved a bandwidth over 1.5 THz with 60 dB of signal-to-noise ratio (SNR) under a bias voltage of 25 V and optical pump of 155 mW. This work demonstrates that mature ion implantation can be a feasible approach to efficiently modulate the carrier lifetime of group IV photoconductive material to ps level, which indicates that phosphorus implanted Ge0.96Sn0.04 THz PCA can potentially operate as a detector, paving the way toward the THz system integration on Si platform.