Abstract
Single- and few-layer graphene films are promising for post-silicon electronics because of their high carrier mobility, high optical transmittance, strong mechanical properties and excellent stability. However, several important fundamental and technological issues, such as lack of energy band gap and scale-up production method, still hinder their applications in electronics. In this seminar, discussions will be focused on our recent approaches to attack these issues, including (1) Electrochemical exfoliation of graphite to efficiently obtain large quantity and high quality graphene thin sheets. This method is simple and with fabrication low-cost, which is potentially attractive for scale upproduction. (2) Conventional method of using graphene is to transfer as-grown graphene on metal substrates to desired insulating substrates, which is not friendly for IC-fabrication. We have demonstrated wafer-scale graphene growth directly on insulating substrates by chemical vapor deposition. (3) The opening of electrical bandgap in graphene is crucial for logic circuit applications. Recent studies have shown that an energy gap in Bernal-stacked bilayer graphene can be generated by applying an electric displacement field. We have shown the opening of an electrical band gap for bilayer graphene can also be achieved with molecular doping.