LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals

Shiuh Chao; Chen Yang Huang; Hao Min Ku

doi:10.1364/soled.2010.sothb3

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LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals

Shiuh Chao, Chen Yang Huang and Hao Min Ku

Optics InfoBase Conference Papers

2010

DOI: https://doi.org/10.1364/soled.2010.sothb3

Appears in keyword about Physics

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Instrumentation

Atomic and Molecular Physics

and Optics

Large area 3-D auto-cloned photonics crystal was fabricated on the backside of the InGaN/GaN LED. Averaged 94±13% light extraction enhancement was obtained uniformly across the 2" wafer that contained more than 14,000 LED. © 2010 Optical Society of America.

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Title: LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals
Translated title: LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals
Creators - without role: Shiuh Chao - National Tsing Hua University
Chen Yang Huang - National Tsing Hua University
Hao Min Ku - National Tsing Hua University
Publication Details: Optics InfoBase Conference Papers
Identifiers: 9781557528964; 9957776340806774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals

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