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Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate
Conference paper   Peer reviewed

Large-area WSe2 electric double layer transistors on a plastic substrate

Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa and Taishi Takenobu
Japanese Journal of Applied Physics, Vol.54(6), 06FF06
06/2015

Abstract

Engineering (all) Physics and Astronomy (all)
Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices.

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