Abstract
Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger Gamma to X (L) energy separations in InxGa1-xxAs-based semiconductor nanostructures.