Abstract
A photo-detector using silicon nanocrystal layer sandwiched between two electrodes is first time proposed and demonstrated for photo-sensing application on LTPSpanels. Through post-annealing of silicon rich oxide films, Si nanocrystals can be formed with good uniformity and high temperature tolerance to respond best to certain absorption spectrum of the corresponding light source. These silicon nanocrystals, less than 10nm in diameter, exhibit better quantum confinement effect, which promote electron-hole pair generation in photo-sensing region as a result of its direct bandgap. In addition to obtaining photo sensitivity superior to that of a P-I-N diode currently used in LTPS technology, the new sensor can maximize the fill factor in a pixel circuit by adapting a stacked structure. © 2007 SID.