Abstract
The strain/relaxation behavior of nanometer thick Y 2 O 3 (111) epitaxially grown on Si (111) has been investigated with x-ray diffraction using synchrotron radiation. The authors systematically measured a series of Bragg reflections to determine the lattice parameters of Y 2 O 3 films with thickness ranging from 1.6 to 9.5 nm. The strain state of the oxide lattice along surface normal and lateral directions is analyzed as a function of the oxide thickness. The spectra of Si 2p and Y 3d, obtained with in situ angle-resolved x-ray photoelectron spectroscopy on Y 2 O 3 5 nm thick, showed no Y silicide but a very small incorporation of Si into the Y 2 O 3 films at the interface. © 2010 American Vacuum Society.