Abstract
Cost and imaging are becoming big concerns in lithographic patterning of 32-nm half pitch and beyond, affecting the choice of lithographic patterning tools and the corresponding mask technology. In this paper, the cost and imaging aspects of ArF immersion double patterning, multiple e-beam maskless lithography, and extreme-uv lithography are discussed with proposals to make the cost acceptable. The impacts of these technologies to the masking industry are quite different. They are also given here. Some comments are made on nano-imprint lithography. © 2009 SPIE.