Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process

Conference paper

S. H. Dai, J. J. Peng, C. C. Chen, C. J. Lin and Y. C. King

International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.314

2008

Abstract

Voltage;Suppression;Circuit;Diode;SiGe;HBT;BiCMOS

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Title: Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process
Creators - without role: S. H. Dai - National Tsing Hua University
J. J. Peng - National Tsing Hua University
C. C. Chen - National Tsing Hua University
C. J. Lin - 國立清華大學電機資訊學院電機工程學系
Y. C. King - National Tsing Hua University
Publication Details: International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.314
Identifiers: 9957771499706774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper