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Low Propagation Loss Acoustic Delay Lines based on YX-LiNbO3/SiO2/Sapphire
Conference paper

Low Propagation Loss Acoustic Delay Lines based on YX-LiNbO3/SiO2/Sapphire

Chia-Hsien Tsai, Tzu-Hsuan Hsu, Zhi-Qiang Lee, Cheng-Chien Lin, Ya-Ching Yu, Shao-Siang Tung and Ming-Huang Li
IEEE International Ultrasonics Symposium, IUS
2023

Abstract

Acoustic devices delay lines lithium niobate microelectromechanical systems (MEMS) piezoelectric devices shear horizontal surface acoustic wave (SH-SAW) Acoustics and Ultrasonics
In this work, we investigated the design of low loss and wideband shear horizontal surface acoustic wave (SH-SAW) acoustic delay lines (ADLs) on a sapphire-based thin-film lithium niobate on insulator (LNOI) platform. The SH-SAW propagates in a Y-cut LN/SiO 2 double-layer thin film atop the sapphire substrate, where the significant acoustic impedance mismatch between the thin film and the substrate confines the acoustic energy at the surface, thus minimizing the propagation loss. The single-phase unidirectional transducers (SPUDT) used in this work is implemented with gold (Au) to maximize the electromechanical coupling as well as the directionality. The proposed ADLs based on YX-LN/SiO 2 /Sapphire centered at 830 MHz showed a minimum insertion loss (IL) of 3 dB, a wide fractional bandwidth (FBW) of 4.19%, and a low propagation loss (PL) of 2.51 dB/mm, which yields an effective quality factor (Q PL ) exceeds 2,700. These results demonstrate the competitive performance of the proposed devices compared to state-of-the-art thin film LN ADLs, offering extremely low propagation loss for RF signal processing.

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