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Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application
Conference paper

Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

Yohei Ishii, Yao-Jen Lee, Wen-Fa Wu, Kenji Maeda, Hiroaki Ishimura and Makoto Miura
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, pp.124-126
03/2019
DOI: https://doi.org/10.1109/EDTM.2019.8731035

Abstract

Dry Etch Hydrogen and SiGe Plasma Electrical and Electronic Engineering Electronic Optical and Magnetic Materials Instrumentation Hardware and Architecture
In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. We found that hydrogen plasma (selective Si etch to SiGe), in combination with conventional plasma etching (selective SiGe etch to Si), controls both Si-SiGe fin etched depth and fin CDs. We could also realize Si-rich surface on SiGe by using a low-temperature plasma process, which can improve SiGe/high-k interface quality in advanced CMOS. The mechanism of the dry etch process and SiGe surface modification will be discussed in this study.

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