Abstract
We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved. © 2012 OSA.
- Title
- Low breakdown voltage silicon avalanche photodetector implemented by interdigitated p-i-n junctions
- Creators - without role
- Chih-Kuo Tseng - Institute of Photonics Technologies , National Tsing Hua UniversityWei-Cheng Hung - Institute of Photonics Technologies , National Tsing Hua UniversityJhong-Da Tian - Institute of Photonics Technologies , National Tsing Hua UniversityKai-Ning Ku - Institute of Photonics Technologies , National Tsing Hua UniversityNeil Na - Intel CorporationYung-Sheng Liu - Institute of Photonics Technologies , National Tsing Hua UniversityMing-Chang M. Lee - Institute of Photonics Technologies , National Tsing Hua University
- Publication Details
- 2012 Conference on Lasers and Electro-Optics, CLEO 2012, 6325595
- Identifiers
- 9781467318396; 9957766247706774
- Academic Unit
- Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper