Abstract
We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved. © OSA 2012.
- Title
- Low breakdown voltage silicon avalanche photodetector implemented by interdigitated p-i-n junctions
- Creators - without role
- Chih-Kuo Tseng - Institute of Photonics Technologies , National Tsing Hua UniversityWei-Cheng Hung - Institute of Photonics Technologies , National Tsing Hua UniversityJhong-Da Tian - National Tsing Hua UniversityKai-Ning Ku - Institute of Photonics Technologies , National Tsing Hua UniversityNeil Na - Intel (Taiwan)Yung-Sheng Liu - Institute of Photonics Technologies , National Tsing Hua UniversityMing-Chang M. Lee - Institute of Photonics Technologies , National Tsing Hua University
- Publication Details
- CLEO: Science and Innovations, CLEO_SI 2012
- Identifiers
- 9781557529435; 9957772126906774
- Academic Unit
- Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper