Abstract
Evaluation of AlGaN/GaN MODFET with low noise, high breakdown and power characteristics was done. A noise figure of 1.9 dB with associated gain of 16.2 dB was obtained at a quiescent point of V DS = 10 and I DS = 30 mA at 10 GHz. Investigation of a MODFET noise model and its correlation with gate leakage current was also done.