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Low programming current phase change memory cell with double GST thermally confined structure
Conference paper

Low programming current phase change memory cell with double GST thermally confined structure

Der-Sheng Chao, Hong-Hui Hsu, Ming-Jung Chen, Yi-Chan Chen, Fred Chen, Chain-Ming Lee, Philip H. Yen, Chih-Wei Chen, Wen-Han Wang, Wei-Su Chen, …
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 4239503
2007

Abstract

A novel PCM cell with double GST thermally confined structure was proposed and fabricated in this work. By inserting an extra bottom GST layer under the confined GST region, the heat loss can be effectively prevented and the temperature profile over active region becomes more uniform. Thus, a low RESET current less than 0.3 mA can be achieved and the SET performance is also improved to be faster than 200 ns. © 2007 IEEE.

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