Abstract
Replacing the current non-alkali glass with soda lime glass can significantly reduce the cost of the current TFT-LCD module. One key step in manufacturing is to make TFT backplane on soda lime glass substrate. In this work, we demonstrate low temperature a-Si thin film transistor (TFT) at 200°C on soda lime glass. With the use of SiNx barrier to prevent sodium contamination, we show the TFT properties can be improved significantly and achieve TFT of saturation mobility 0.47cm 2 /Vs, threshold voltage 0V, off current 77×10 -11 A, sub-threshold swing 1.0 V/dec. We also show that our TFT device has comparable or better threshold voltage stability as compared to those made in non-alkali glass. Finally, we show the robustness of SiNx barrier against long term sodium migration. © 2008 SID.