Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

T. K. Higman; R. T. Fayfield; M. S. Hagedorn; K. H. Lee; S. A. Campbell; J. N. Baillargeon; K. Y. Cheng

doi:10.1116/1.586908

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Conference paper

Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

T. K. Higman, R. T. Fayfield, M. S. Hagedorn, K. H. Lee, S. A. Campbell, J. N. Baillargeon and K. Y. Cheng

1992 North American Conference on Molecular Beam Epitaxy

1992

DOI: https://doi.org/10.1116/1.586908

Abstract

INTERFACE STATES;PASSIVATION;SURFACE REACTIONS;CAPACITORS;THIN FILMS;SILICON NITRIDES;SURFACE STATES;NITRIDATION;MOLECULAR BEAM EPITAXY;CVD;SILICON;AMMONIA

The direct thermal nitridation of silicon by ammonia in a molecular‐beamepitaxial reactor is being reported. These films, which are subsequently thickened by low‐pressure chemical vapor deposition, exhibit extremely lowsurface state densities (∼1010/eV/cm2), which we attribute to extremely low interfacial oxygen contamination.

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Title: Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor
Creators - without role: T. K. Higman - University of Minnesota
R. T. Fayfield - University of Minnesota
M. S. Hagedorn - University of Minnesota
K. H. Lee - University of Minnesota
S. A. Campbell - University of Minnesota
J. N. Baillargeon - University of Illinois Urbana-Champaign
K. Y. Cheng - University of Illinois Urbana-Champaign
Publication Details: 1992 North American Conference on Molecular Beam Epitaxy
Identifiers: 9957776260106774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper

Low temperature nitridation of silicon by direct ammonia nitridation in a molecular beam epitaxy reactor

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