Abstract
Low voltage high density non-volatile memories for data intensive applications need superior performance selectors in terms of endurance, thermal stability, and variability. In this work we studied the mechanisms and key performance factors of low voltage arsenic-free GeCTe-based selectors. The endurance acceleration curve based on operating current is reported. A remarkable endurance of 4x1011 cycles around 100 µA is experimentally demonstrated, together with a projected endurance above 1013 cycles at 20 µA. The nitrogen doped GeCTe selectors are also presented with enhanced thermal stability (400°C, 30 min) and ultra-low threshold voltage cycle-to-cycle variation (< 30 m V /s).