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Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array
Conference paper

Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array

C.H. Wu, C.M. Lee, Y.S. Chen, H.Y. Lee, E. Ambrosi, C.F. Hsu, S. Vaziri, Y.Y. Chen, C.H. Nien, R.L. Hwang, …
Digest of Technical Papers - Symposium on VLSI Technology, Vol.2021-June
2021

Abstract

Electrical and Electronic Engineering
Low voltage selectors are critical for low power operation of high density non-volatile memories. In this work, selectors based on arsenic free chalcogenide materials are demonstrated with record high endurance over 10 11 cycles together with threshold voltage ~1.3V and leakage current ~5nA. The enhanced endurance is attributed to suppression of phase separation with more stable amorphous network by proper dopants.

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