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Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)
Conference paper   Peer reviewed

Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)

C.C. Hung, M.J. Kao, W.C. Lin, S. Chao, D. Tang and M.-J. Tsai
Journal of Magnetism and Magnetic Materials, Vol.282(1-3), pp.373-379
11/2004
DOI: https://doi.org/10.1016/j.jmmm.2004.04.087

Abstract

Low writing current Magnoresistive random access memory Pillar write word line
A novel Magnetoresistive random access memory (MRAM) cell with Pillar write word line (PWWL) was proposed. Besides the magnetic field induced by bottom write word line, an additional magnetic field is superimposed into the memory cell from current flowing through the pair of PWWLs. This structure can significantly enhance the magnetic field and can thus reduce the writing current by approximately a factor of 2 as compared to the conventional structure. The field enhancement will be even more pronounced as the MRAM cell is further downsized. The PWWL structure can be formed simultaneously with via etching by the appropriate layout modification. © 2004 Elsevier B.V. All rights reserved.

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