Abstract
In this work, we propose a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device. The device consists of a MOSFET with Ge charge-traps embedded within the gate dielectric. This trap-formation method provides for precise control of the thicknesses of the oxide layers which sandwich the charge-traps, via thermal oxidation. Memory devices with write/erase speed/voltage and retention time superior to previously reported nanocrystal memory devices were demonstrated.