MOSFET carrier mobility model based on the density-of-state at the DC-centroid in the quantized inversion layer

Conference paper

Shiro Kamohara, Ya-Chin King, Kai Chen, Dongun Park and Chenming Hu

DB Pia Proceedings of 1997 5th International Conference on VLSI and CAD, p.171

1997

Abstract

MOSFET;carrier mobility model;density-of-state;DC-centroid;quantized inversion layer

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Title: MOSFET carrier mobility model based on the density-of-state at the DC-centroid in the quantized inversion layer
Creators - without role: Shiro Kamohara
Ya-Chin King - 國立清華大學電機資訊學院電機工程學系
Kai Chen
Dongun Park
Chenming Hu
Publication Details: DB Pia Proceedings of 1997 5th International Conference on VLSI and CAD, p.171
Identifiers: 9957769880106774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper