Mapping of deep level concentration in semi-insulating GaAs wafers with a laser diode (y=1.3 um m)

Conference paper

Ci-Ling Pan, C.S. Chang, Hsiao-Hua Wu and Tzung-Rue Hsieh

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol.1990-November, pp.598-599

1990

Abstract

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

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Title: Mapping of deep level concentration in semi-insulating GaAs wafers with a laser diode (y=1.3 um m)
Translated title: Mapping of deep level concentration in semi-insulating GaAs wafers with a laser diode (y=1.3 um m)
Creators - without role: Ci-Ling Pan - National Chiao Tung University , Institute of Electro-optical Engineering
C.S. Chang - National Yang Ming Chiao Tung University
Hsiao-Hua Wu - National Yang Ming Chiao Tung University
Tzung-Rue Hsieh - National Yang Ming Chiao Tung University
Publication Details: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol.1990-November, pp.598-599
Identifiers: 0879425504; 9957772205606774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper