Abstract
A novel approach of monitoring wafer-level plasma induced charging contours in FinFET process is proposed. On-chip charge collectors consist of antenna coupled floating gates have been demonstrated to record plasma charging levels during BEOL processes. Data on these in-situ recorders reflect actual potential on transistor gates during plasma charging stress. Wafer maps, containing positive and negative charging levels and antenna potential contours, provides a powerful tool for future FinFET process optimization and reliability evaluations.