Abstract
The mask cost and cycle time reduction in the IC industry was discussed. It was found that as the critical dimension (CD) shrinks, the optical exposure tools do not extend to a shorter wavelength and in such sub-wavelength technology generation, the mask error factor (MEF) is higher. The higher MEF means tighter mask specification is required to sustain the lithography performance. It was observed that the tighter mask specification will impact both mask processing complexity and cost.