Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces

K. Young; S. Horng; A. Kahn; Julia M. Phillips

doi:10.1557/PROC-148-185

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Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces

K. Young, S. Horng, A. Kahn and Julia M. Phillips

Materials Research Society MRS Online Proceedings Library (OPL), Vol.148

1989

DOI: https://doi.org/10.1557/PROC-148-185

Abstract

MBE;GaAs

We have used molecular beam epitaxy to grow CaxSr1−xF2 films of various thicknesses on GaAs substrates with different orientations, i.e. (100), (111)A, (511)A, (511)B, (711)A and (711)B. On all orientations, the same crystallographic direction is normal to the surface in both the substrate and fluoride film. For all orientations except (111), the fluoride surface is reconstructed with (111) facets. Without annealing, the best crystallinity is obtained for the (100), (111) and (511)B orientations.

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Title: Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces
Creators - without role: K. Young - Princeton University
S. Horng - Princeton University
A. Kahn - Princeton University
Julia M. Phillips - AT&T (United States)
Publication Details: Materials Research Society MRS Online Proceedings Library (OPL), Vol.148
Identifiers: 9957771857006774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper

Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces

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