Abstract
In this article, we present a sandwiched structure for measuring interface thermal resistance of metal-dielectric layers. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two SiO 2 layers. Measurement results showed the interface thermal resistance of metal/dielectric layers were narrowly distributed over the range of 2.5∼ 3.8×10 -8 m 2 K/W. A continuum two-fluid model was served to verify our measurement data and also provided some reasonable physical insight into heat flow across interface. ©2008 IEEE.