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Metal/GaN reaction chemistry and their electrical properties
Conference paper

Metal/GaN reaction chemistry and their electrical properties

C.C. Kim, S.K. Seol, J.K. Kim, J.-L. Lee, Y. Hwu, P. Ruterana, G. Magaritondo and J.H. Je
Physica Status Solidi (B) Basic Research, Vol.241(12), pp.2771-2774
10/2004
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics
We investigated the reaction chemistry of metal contacts to GaN during annealing using X-ray photoelectron spectroscopy (XPS). GaN decomposition was estimated, using XPS, to occur in N 2 annealed Ni-alloy contacts at 550 °C. The reaction was greatly accelerated by the catalytic effect of Au and Pt. The decomposition was correlated with the rapid degradation of electrical properties during annealing. The results suggest that high-temperature applications may be critically limited by the degradation of metal contacts especially due to activated Ni reactivity in Ni-alloyed contacts. Meanwhile, the thermal stability of Ni/Au contact greatly improves by suppressing the activated Ni reactivity, which is able to be obtained by forming preferential Ni-O bonding through annealing in air. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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