Mo effect on one-step sputtering chalcopyrite CIGS thin films

Tzu-Ying Lin; Chia-Hsiang Chen; Chih-Huang Lai

doi:10.1109/PVSC.2012.6317989

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Conference paper

Mo effect on one-step sputtering chalcopyrite CIGS thin films

Tzu-Ying Lin, Tzu-Ying Lin, Chia-Hsiang Chen and Chih-Huang Lai

Conference Record of the IEEE Photovoltaic Specialists Conference, pp.1999-2002

2012

DOI: https://doi.org/10.1109/PVSC.2012.6317989

Abstract

Mo effect

residual stress

In this study, we have investigated the working pressure effect on the properties of molybdenum (Mo) films and how the Mo back contact affects the chalcopyrite Cu(In,Ga)Se ₂ (CIGS) films, which are prepared by one-step sputtering process. The properties of surface morphology, crystalline structure and residual stress are discussed. Mo films sputtered at low working pressure have dense structure with compressive stress, and become porous with tensile stress at high working pressure. In addition, the preferred orientation of following deposited CIGS film shows strong correlation with the residual stress of Mo back contact. © 2012 IEEE.

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Title: Mo effect on one-step sputtering chalcopyrite CIGS thin films
Creators - without role: Tzu-Ying Lin - National Tsing Hua University
Tzu-Ying Lin - Department of Materials Science and Engineering , National Tsing Hua University
Chia-Hsiang Chen - Department of Materials Science and Engineering , National Tsing Hua University
Chih-Huang Lai - Department of Materials Science and Engineering , National Tsing Hua University
Identifiers: 9781467300643; 9957768387306774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Conference Record of the IEEE Photovoltaic Specialists Conference, pp.1999-2002

Mo effect on one-step sputtering chalcopyrite CIGS thin films

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