Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures

C. C.-H. Hsu; C.-J. Lin

doi:10.7567/SSDM.1993.PB-3-11

Back

Conference paper

Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures

C. C.-H. Hsu and C.-J. Lin

International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.476

1993

DOI: https://doi.org/10.7567/SSDM.1993.PB-3-11

Abstract

Substrate-Hot-Electron;Voltages

The electron mobility degradation due to interface traps generated by substrate-hot-electrons injected from a Buried Junction Injector (BJI) structure is investigated. It is the first time to observe the interface trap induced mobility degradation is independent of the stress voltages but is a strong function of the temperatures during substrate-hot-electron stress. Direct linear relationship between mobility degradation and hot-electron generated interface traps is obtained.

Metrics

1 Record Views

Details

Title: Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures
Creators - without role: C. C.-H. Hsu
C.-J. Lin - 國立清華大學電機資訊學院電機工程學系
Publication Details: International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.476
Identifiers: 9957774447606774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper

Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media