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Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications
Conference paper

Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications

Chuan-Wei Tsou, Po-Tsung Tu, Kan-Hsueh Tsai, Po-Chun Yeh, Heng-Yuan Lee, Li-Heng Lee and Shawn S. H. Hsu
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, pp.1-2
07/2018
DOI: https://doi.org/10.1109/VLSI-TSA.2018.8403846

Abstract

Electrical and Electronic Engineering Instrumentation Electronic Optical and Magnetic Materials
In this paper, the pulsed IV, small-signal, and load-pull measurements are employed for characterization of GaN-on-Si HEMTs to establish the large-signal model for RF applications. A modified Angelov model was proposed, which achieved excellent agreement with the measured results. Both trapping and self-heating effects are identified based on the pulsed IV measurements, while the charge model are established based on small-signal measurements. Finally, the load-pull simulation and measurements were used to verify the accuracy oflarge-signal characteristics.

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