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Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators
Conference paper

Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Ping-Yi Hsieh, Yi-Jui Chang, Pin-Jun Chen, Chun-Liang Chen, Chih-Chao Yang, Po-Tsang Huang, Yi-Jing Chen, Chih-Ming Shen, Yu-Wei Liu, Chien-Chi Huang, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2019-December, 8993441
12/2019
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm 2 ), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.

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