Abstract
For the first time, below 400°C-fabricated gate-all-around (GAA) transistor fabrication process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers are plasma-assisted atomic layer etching (PA-ALE), plasma immersion ion implantation (PIII) and far-infrared laser activation (FIR-LA). The 3D stackable single-grained Si GAA MOSFETs thus fabricated exhibit record-high I <sub>on</sub> /I <sub>off</sub> ratio (~10 <sup>8</sup> ) with low I <sub>off</sub> (pFETs<10 <sup>-2</sup> nA/μm). Moreover, the stackability of the GAA MOSFETs and the differential output of dual-mode 10T SRAM readout enable 2x throughput in the CIM circuitry.