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Multi-stacking hybrid P/N/P nanosheet layers junctionless field-effect transistors
Conference paper

Multi-stacking hybrid P/N/P nanosheet layers junctionless field-effect transistors

Hui-Hsuan Li, Yu-Ru Lin, Yu-Hsien Lin and Jia-Jyun Yu
Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, pp.1-3
06/2018
DOI: https://doi.org/10.1109/ISNE.2018.8394662

Abstract

field-effect transistors(FET) hybrid Junctionless (JL) nanosheet(NS) Electrical and Electronic Engineering Electronic Optical and Magnetic Materials Instrumentation
This work demonstrates the hybrid poly-Si nanosheet channels junctionless (JL) field-effect transistors (FET). The hybrid P/N/P double nanosheet channels JL-FFT exhibits the excellent electrical performances in terms of a high I <sub>on</sub> /I <sub>off</sub> current ratio (>10 <sup>7</sup> ), subthreshold swing (176mV/dec), and a small DIBL (13mV/V). These properties are achieved by reducing the effective channel thickness determined by the channel/substrate/channel junction. Furthermore, this stacked hybrid P/N/P double nanosheet channels JL-FET is a promising candidate for high-density 3D stacked IC applications.

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