Abstract
In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, hot-carrier reliability issues such as disturbs and endurance in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using a DINOR structure. These results can be used as a guideline for designers. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These properties meet scaling trends to make this cell a promising candidate for future flash memory applications.