Near-Infrared Femtosecond Laser activation of shallow B and P doped layers

Yi-Chao Wang; Alexei Zaitsev; Ci-Ling Pan; Jia-Min Shieh; Zun-Hao Chen; Bau-Tong Dai

doi:10.1109/CLEOPR.2005.1569740

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Conference paper

Near-Infrared Femtosecond Laser activation of shallow B and P doped layers

Yi-Chao Wang, Alexei Zaitsev, Ci-Ling Pan, Jia-Min Shieh, Zun-Hao Chen and Bau-Tong Dai

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, Vol.2005, pp.1372-1373

2005

DOI: https://doi.org/10.1109/CLEOPR.2005.1569740

Abstract

Boron

Laser activation

Phosphorous

Shallow junction

Femtosecond Ti:sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.

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Title: Near-Infrared Femtosecond Laser activation of shallow B and P doped layers
Creators - without role: Yi-Chao Wang - National Yang Ming Chiao Tung University
Alexei Zaitsev - National Yang Ming Chiao Tung University
Ci-Ling Pan - Institute of Electro-Optical Engineering , National Chiao Tung University
Jia-Min Shieh - Nano Hydrophobics (United States)
Zun-Hao Chen - National Institutes of Applied Research
Bau-Tong Dai - Nano Hydrophobics (United States)
Publication Details: Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, Vol.2005, pp.1372-1373
Identifiers: 0780392426; 9780780392427; 9957767792606774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

Near-Infrared Femtosecond Laser activation of shallow B and P doped layers

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