Abstract
Buried bit-line NAND (BiNAND) Flash is newly proposed to achieve low voltage programming/erase and facilitate multi-level storage. Due to the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between word-line and bit-line and therefore minimizes the disturbance. The negative programmed threshold voltage also facilitates the operation of multi-level storage due to high array conductivity.