Abstract
A novel EEPROM memory cell with new program and erase operations fabricated by standard CMOS logic process is presented. The cell which consists of two N-Type MOSFET transistors in series is programmed by select gate controlled channel hot hole and erased by channel hot electron injection along with more than 10 5 cycles of endurance and 1000 hours of data retention at 150°C. Without an additional P-well or N-well serving as the coupling gate, the area of a bit can be as small as 8F 2 , the smallest area reported for single-poly EEPROM cells.