Abstract
A novel Type-I/II DHBT with AlInP emitter and GaAsSb base layers has been developed which demonstrates high gain, balanced f <sub>T</sub> /f <sub>MAX</sub> > 400 GHz and BV <sub>CEO</sub> > 4V. Due to its favorable band alignment, Type- I/II DHBT shows superior DC and RF linearity performance compared with foundry-provided Type-I DHBTs.