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Nonlinearity Driven Higher Order Harmonics in CMOS-MEMS Resonators
Conference paper

Nonlinearity Driven Higher Order Harmonics in CMOS-MEMS Resonators

Kalyani Bhosale, Gayathri Pillai and Sheng-Shian Li
IFCS-ISAF 2020 - Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, Proceedings, 9234852
07/2020

Abstract

CMOS- MEMS Duffing higher order modes nonlinear resonator phase noise Signal Processing Electronic Optical and Magnetic Materials Instrumentation Atomic and Molecular Physics and Optics
In this work, we explore the generation of higher order harmonics in an electrostatically actuated wide-width beam resonator fabricated by a CMOS-MEMS Titanium Nitride Composite (TiN-C) platform. The explored TiN-C platform can achieve a gap of 400 nm with high transduction efficiency, low motional resistance (R_{m}) and enhanced frequency stability. A record-high Radius of Curvature (R.O.C of 11.9 cm) of the fabricated wide-width pseudo free-free beam is achieved among CMOS-MEMS counterparts. The fundamental mode is measured at a resonance frequency of 9.8 MHz. The second and the third higher order harmonics are observed when the resonator is excited at its fundamental flexural mode in the non-linear region. A varying AC voltage drives the resonator from the linear regime into non-linear regime for an applied DC bias of 80 V. The presence of harmonics is confirmed electrically and optically through measurement using the Spectrum Analyzer and the Laser Doppler Vibrometer (LDV) respectively.

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