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Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories
Conference paper

Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories

Shinji Satoh, Kazuhiro Shimizu, Tomoharu Tanaka, Fumitaka Arai, Seiichi Aritome and Riichiro Shirota
Digest of Technical Papers - Symposium on VLSI Technology, pp.108-109
1998

Abstract

Electrical and Electronic Engineering
This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.

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