摘要
For the first time, a novel type-C SOT-MRAM device is demonstrated, featuring a circular-shaped MTJ with built-in magnetic anisotropy (MA). The type-C SOT-MRAM exhibits field-free operation while maintaining strong data retention and excellent performance. The high-speed write capabilities with pulse durations as short as 1 ns are demonstrated, along with excellent thermal stability (>70k(B)T), validated across multiple devices and an 8kb memory array. Furthermore, the type-C device offers a 48% reduction in cell size and a 25% decrease in switching current, presenting a highly compelling solution for emerging applications that require cost-effective, high-performance non-volatile memories.