Abstract
Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.