Abstract
A novel field-enhanced flash memory device fabricated by sequential lateral solidified (SLS) low temperature poly-Si (LTPS) technology on glass substrate was investigated. The poly-Si protrusions at grain boundaries (GB) as a result of SLS process can be well-controlled and located along the width direction of the transistor. Protrusions at the grain boundaries are utilized as emitting source to achieve a flash memory device with low operation voltage (≤20V), fast program/erase time, and wide V th window by field-enhanced channel hot electron (FE-CHE) injection for programming and field-enhanced band-to-band hot hole (FE-BBHH) injection for erase.