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On-chip gate ESD protection for AlGaN/GaN E-mode power HEMT delivering >2kV HBM ESD capability
Conference paper

On-chip gate ESD protection for AlGaN/GaN E-mode power HEMT delivering >2kV HBM ESD capability

C. Zhou, Y. Chen, R. Wong, Y. Guan, J. Shen, H. Liao, Q. Zhao, C. He, Y. Wu, W. Lin, …
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019, pp.175-176
10/2019
DOI: https://doi.org/10.1109/WiPDA46397.2019.8998945

Abstract

AlGaN/GaN HEMT E-mode ESD HBM Energy Engineering and Power Technology Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
In this work, we proposed an on-chip protection circuit to enhance the gate ESD robustness for the AlGaN/GaN E-mode power HEMT, based on the monolithic 8' GaN-on-Si technology platform. The developed circuit features: 1) a voltage divider formed by 2 lateral field-effect-rectifiers and a 2DEG resistor in series; 2) a discharge HEMT with its G/S parallel to the resistor and D/S parallel to the G/S of the power HEMT. In a forward gate ESD event, the discharge HEMT starts to dissipate energy when the voltage drop across the 2DEG resistor is higher than its Vth. While in a reverse gate ESD event, the discharge HEMT operates in the reverse diode connection mode to conduction current. A forward/reverse turn-on ofsim +5V/-2V was experimentally demonstrated without affecting normal gate off/on operation between 0V/5V. TLP tests demonstrated a forward/reverse peak gate current of + 3.2A and <-5.3A, and HBM tests showed forward/reverse G-S ESD capability higher than 2kV.

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