Abstract
Some investigations are presented on the p-type conduction of CdTe single crystals. A model was constructed to describe the atom arrangements in CdTe at various process stages. By using phosphorus implantation and pulse electron beam (PEB) annealing, high hole concentrations were obtained. The electron paramagnetic resonance (EPR) measurements as well as the theoretical calculations of the implant and damage profiles after the implantation and the dopant redistribution profiles after the pulse electron-beam annealing show the significant effect on p-type conduction of melting crystals in the E-beam annealing process.