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Optical properties of grown uniformly- and delta-doped epitaxial GaP:N
Conference paper

Optical properties of grown uniformly- and delta-doped epitaxial GaP:N

K. Y. Cheng, J. N. Baillargeon, G. E. Hofler and K. C. Hsieh
1991 international symposium on GaAs and related compounds
1991

Abstract

uniformly;delta-doped;epitaxial;GaP:N

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