Abstract
We report on the optimization of Ga 0.27 In 0.73 As 0.67 P 0.33 /Ga 0.11 In 0.89 As 0.24 P 0.76 compressive-strain multiple-quantum-well (CS-MQW) grown by low-pressure metalorganic chemical vapor deposition for 1.3-μm ridge-waveguide laser diodes (LDs). The structural and optical properties are characterized by double-crystal x-ray diffraction and photoluminescence (PL) measurements, respectively. The optimum thicknesses of the well, barrier, and waveguide layer of the active region are 4 nm, 10 nm, and 100 nm, respectively. The GaInAsP/ GaInAsP CS-MQW as-cleaved LDs with the optimum active region, a 3.5-μm-width ridge, and a 900-μm-cavity length exhibit the threshold current density of 1.09 kA/cm 2 , a differential quantum efficiency of 30%, a characteristic temperature of 60 K, a maximum operating temperature up to 75°C, and a redshift rate of 0.30 nm/°C.