Abstract
A fully monolithic 1.12-MHz CMOS-MEMS nonlinear oscillator comprising a double-ended tuning fork (DETF) resonator and a transimpedance sustaining amplifier has been proposed to enable significant close-to-carrier phase noise (PN) reduction while maximizing its output power for far-from-carrier phase noise improvement. The best-case PN of -77 dBc/Hz at 10-Hz offset, -97 dBc/Hz at 100-Hz offset, and -113 dBc/Hz at 1-kHz offset is realized in a monolithic CMOS-MEMS flexural-mode resonator oscillator for the first time, which is on par with bulk-mode MEMS oscillators using resonator Q > 100,000.